光寻址电位传感器中IGZO层的厚度效应

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543666

Chun-Hui Chen, Chia‐Ming Yang, Liann-Be Chang, Chao‐Sung Lai

{"title":"光寻址电位传感器中IGZO层的厚度效应","authors":"Chun-Hui Chen, Chia‐Ming Yang, Liann-Be Chang, Chao‐Sung Lai","doi":"10.1109/AM-FPD.2016.7543666","DOIUrl":null,"url":null,"abstract":"The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thickness effect of IGZO layer in light-addressable potentiometric sensor\",\"authors\":\"Chun-Hui Chen, Chia‐Ming Yang, Liann-Be Chang, Chao‐Sung Lai\",\"doi\":\"10.1109/AM-FPD.2016.7543666\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543666\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了in - ga - zn氧化物(IGZO)半导体层的厚度效应，用于光寻址电位传感器(LAPS)的pH传感。pH传感膜为45 nm厚的NbOx，直接安装在IGZO/ITO/玻璃基板上。反应式射频溅射中，IGZO层厚度由时模控制决定。在IGZO厚度为300 nm时，可获得最高的光电压和工作频率。当交流信号频率为1khz时，pH灵敏度约为65mv /pH。为了获得更好的滞回稳定性，建议进一步研究传感膜的优化。

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Thickness effect of IGZO layer in light-addressable potentiometric sensor

The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.

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2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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