X和ku波段内部匹配GaN放大器，输出功率大于100W

2012 7th European Microwave Integrated Circuit Conference Pub Date : 2012-10-01 DOI:10.23919/EUMC.2012.6459316

H. Noto, H. Maehara, H. Uchida, M. Koyanagi, H. Utsumi, J. Nishihara, H. Otsuka, K. Yamanaka, M. Nakayama, Y. Hirano

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引用次数: 28

摘要

本文介绍了工作在X波段和ku波段的内部匹配GaN-HEMT高功率放大器。对于x波段放大器，采用小封装，以减少整个射频模块的尺寸。对于ku波段放大器，将4个晶体管电源条组合在一起可获得100W输出功率。据我们所知，这是第一个在ku波段单个固态器件获得超过100W输出功率的报道。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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X- and Ku-band internally matched GaN amplifiers with more than 100W output power

In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more than 100W output power is obtained from single solid state device in Ku-band.

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2012 7th European Microwave Integrated Circuit Conference

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