采用多晶硅栅极提高超薄HfO/sub / cmosfet的性能

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015400

Q. Lu, H. Takeuchi, Xiaofan Meng, T. King, C. Hu, K. Onishi, Hag-ju Cho, J. Lee

{"title":"采用多晶硅栅极提高超薄HfO/sub / cmosfet的性能","authors":"Q. Lu, H. Takeuchi, Xiaofan Meng, T. King, C. Hu, K. Onishi, Hag-ju Cho, J. Lee","doi":"10.1109/VLSIT.2002.1015400","DOIUrl":null,"url":null,"abstract":"Poly-SiGe is investigated as the gate material for CMOS transistors with ultra-thin HfO/sub 2/ gate dielectric. Compared with poly-Si, poly-SiGe reduces the gate depletion effect, and also results in thinner EOT of the gate dielectric after 1000/spl deg/C annealing, with low gate leakage maintained. The Si interface quality is also better than that achieved with surface nitridation, which has been used to reduce EOT. Therefore, the use of poly-SiGe as the gate material is effective for improving the performance of ultra-thin HfO/sub 2/ CMOS transistors.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Improved performance of ultra-thin HfO/sub 2/ CMOSFETs using poly-SiGe gate\",\"authors\":\"Q. Lu, H. Takeuchi, Xiaofan Meng, T. King, C. Hu, K. Onishi, Hag-ju Cho, J. Lee\",\"doi\":\"10.1109/VLSIT.2002.1015400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Poly-SiGe is investigated as the gate material for CMOS transistors with ultra-thin HfO/sub 2/ gate dielectric. Compared with poly-Si, poly-SiGe reduces the gate depletion effect, and also results in thinner EOT of the gate dielectric after 1000/spl deg/C annealing, with low gate leakage maintained. The Si interface quality is also better than that achieved with surface nitridation, which has been used to reduce EOT. Therefore, the use of poly-SiGe as the gate material is effective for improving the performance of ultra-thin HfO/sub 2/ CMOS transistors.\",\"PeriodicalId\":103040,\"journal\":{\"name\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2002.1015400\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

研究了Poly-SiGe作为超薄HfO/sub /栅极介质CMOS晶体管的栅极材料。与poly-Si相比，poly-SiGe降低了栅极损耗效应，并且在1000/spl℃退火后栅极介电体的EOT更薄，栅极泄漏保持在较低水平。硅界面质量也优于表面氮化处理，表面氮化处理已用于降低EOT。因此，采用poly-SiGe作为栅极材料对于提高超薄HfO/sub 2/ CMOS晶体管的性能是有效的。

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Improved performance of ultra-thin HfO/sub 2/ CMOSFETs using poly-SiGe gate

Poly-SiGe is investigated as the gate material for CMOS transistors with ultra-thin HfO/sub 2/ gate dielectric. Compared with poly-Si, poly-SiGe reduces the gate depletion effect, and also results in thinner EOT of the gate dielectric after 1000/spl deg/C annealing, with low gate leakage maintained. The Si interface quality is also better than that achieved with surface nitridation, which has been used to reduce EOT. Therefore, the use of poly-SiGe as the gate material is effective for improving the performance of ultra-thin HfO/sub 2/ CMOS transistors.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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