40nm CMOS低电流数字预失真3G-4G发射机

M. Collados, Hongli Zhang, B. Tenbroek, Hsiang-Hui Chang
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引用次数: 3

摘要

为了创建具有高电流效率的宽带发射路径,将单平衡无源调制器与b类单端谐振驱动器相结合。这种结构的线性度受到调制器的强三次谐波响应和驱动器中的强三阶互调的限制。提出了一种新的数字预失真方法,在这些高度非线性的条件下实现良好的线性。在40nm CMOS中实现,调制器和驱动器组合仅消耗45mW,提供+3dBm Release 99 WCDMA信号,EVM为1.1%,ACLR为-54dBc, RX频段噪声为-160dBc/Hz。在不调整预失真系数的情况下,无论温度、频率和tx功率,ACLR都保持在-50dBc以下。发射机提供+0dBm 10MHz LTE和-51dBc ACLR。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low-current digitally predistorted 3G-4G transmitter in 40nm CMOS
To create a wide-band transmit path with high current efficiency a single-balanced passive modulator is combined with a class-B single-ended resonant driver. The linearity of such configuration is limited by a strong 3rd harmonic response of the modulator combined with a strong third-order intermodulation in the driver. A novel digital predistortion approach is presented to enable good linearity under these highly non-linear conditions. Implemented in 40nm CMOS, the modulator and driver combined consume only 45mW to deliver a +3dBm Release 99 WCDMA signal with 1.1% EVM, -54dBc ACLR and -160dBc/Hz noise in the RX band. The ACLR remains below -50dBc over temperature, frequency and TX-power without adjustment of the predistortion coefficients. The transmitter delivers +0dBm 10MHz LTE with -51dBc ACLR.
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