J. Lauter, A. Forster, H. Luth, K. D. Muller, R. Reinartz
{"title":"AlGaAs/GaAs雪崩探测器阵列-1 GBit/s x射线接收机,用于定时测量","authors":"J. Lauter, A. Forster, H. Luth, K. D. Muller, R. Reinartz","doi":"10.1109/NSSMIC.1995.504327","DOIUrl":null,"url":null,"abstract":"We report on the first realization of 2/spl times/2 detector arrays based on an aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) heterostructure avalanche photodiodes. These structures consists of a GaAs absorption layer and an AlGaAs/GaAs avalanche layer which acts as an multiplication region. The samples were grown by molecular beam epitaxy (MBE) and processed into p-i-n diodes of different diameters. Dark current densities were as low as 200 pA/mm/sup 2/ at 90% of the breakdown voltage as determined by I-V measurements. The avalanche gain of the devices have been measured with optical pulses. Gains up to a factor of M=1000 have been determined before breakdown. Additionally the excess noise factor F(M) has been derived for gains between M=1 and M=300. The ionization rates ratio of the structure is k=/spl alpha///spl beta/=3.4/spl plusmn/0.3. In connection to a fast electronic readout chain the time response of the detectors to 14.4 keV X-ray photons has been tested at the ESRF (Grenoble). The time resolution was found to be 200 ps (FWHM) using standard timing electronics.","PeriodicalId":409998,"journal":{"name":"1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements\",\"authors\":\"J. Lauter, A. Forster, H. Luth, K. D. Muller, R. Reinartz\",\"doi\":\"10.1109/NSSMIC.1995.504327\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the first realization of 2/spl times/2 detector arrays based on an aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) heterostructure avalanche photodiodes. These structures consists of a GaAs absorption layer and an AlGaAs/GaAs avalanche layer which acts as an multiplication region. The samples were grown by molecular beam epitaxy (MBE) and processed into p-i-n diodes of different diameters. Dark current densities were as low as 200 pA/mm/sup 2/ at 90% of the breakdown voltage as determined by I-V measurements. The avalanche gain of the devices have been measured with optical pulses. Gains up to a factor of M=1000 have been determined before breakdown. Additionally the excess noise factor F(M) has been derived for gains between M=1 and M=300. The ionization rates ratio of the structure is k=/spl alpha///spl beta/=3.4/spl plusmn/0.3. In connection to a fast electronic readout chain the time response of the detectors to 14.4 keV X-ray photons has been tested at the ESRF (Grenoble). The time resolution was found to be 200 ps (FWHM) using standard timing electronics.\",\"PeriodicalId\":409998,\"journal\":{\"name\":\"1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.1995.504327\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.1995.504327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report on the first realization of 2/spl times/2 detector arrays based on an aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) heterostructure avalanche photodiodes. These structures consists of a GaAs absorption layer and an AlGaAs/GaAs avalanche layer which acts as an multiplication region. The samples were grown by molecular beam epitaxy (MBE) and processed into p-i-n diodes of different diameters. Dark current densities were as low as 200 pA/mm/sup 2/ at 90% of the breakdown voltage as determined by I-V measurements. The avalanche gain of the devices have been measured with optical pulses. Gains up to a factor of M=1000 have been determined before breakdown. Additionally the excess noise factor F(M) has been derived for gains between M=1 and M=300. The ionization rates ratio of the structure is k=/spl alpha///spl beta/=3.4/spl plusmn/0.3. In connection to a fast electronic readout chain the time response of the detectors to 14.4 keV X-ray photons has been tested at the ESRF (Grenoble). The time resolution was found to be 200 ps (FWHM) using standard timing electronics.