复合高能脉冲激光辐照单晶硅的应力场特性研究

Z. Xue, Lihong Yang, Yinzi Wu, Guanwen Chen, Menghan Li
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引用次数: 0

摘要

本文采用数值理论计算和实验模拟相结合的方法。研究和分析了1064nm和532nm复合脉冲激光与单晶硅相互作用下的应力场特性。基于傅立叶热传导方程,建立了复合脉冲激光辐照下单晶硅的有限元模型。利用仿真软件进行数值模拟,分析单晶硅材料在单脉冲激光和复合高能脉冲激光作用下产生的应力场分布。最后,得到了复合高能脉冲激光照射下的应力场分布规律,当脉冲激光作用于目标材料时,应力场分布范围变大,压力值也随之增大,硅材料更容易受到损伤。为了解决激光加工单晶硅过程中应力场分布影响单晶硅加工效果的问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study on the stress field characteristics of single crystal silicon irradiated by composite high-energy pulsed laser
This paper adopts the method of numerical theoretical calculation and experimental simulation. The stress field characteristics under the interaction of 1064nm and 532nm composite pulse laser and single crystal silicon are studied and analyzed. Based on Fourier's heat conduction equation to establish a finite element model of single crystal silicon under composite pulse laser irradiation. Numerical simulation using simulation software, Analyze the stress field distribution generated during the action of single-crystal silicon material under the action of single-pulse laser and composite high-energy pulsed laser. Finally, the stress field distribution law under the irradiation of the composite high-energy pulsed laser is obtained, and when the pulsed laser acts on the target material, the stress field distribution range becomes larger, and the pressure value also increases, and the silicon material is more easily damaged. In order to solve the problem that the distribution of stress field affects the processing effect of monocrystalline silicon in the process of laser processing silicon.
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