等离子体掺杂形成的超浅p/sup +/层电导率分析

Extended Abstracts of the Fifth International Workshop on Junction Technology Pub Date : 2005-06-07 DOI:10.1109/IWJT.2005.203887

K. Tsutsui, K. Majima, Y. Fukagawa, Y. Sasaki, K. Okashita, H. Tamura, K. Kakushima, H. Ito, B. Mizuno, H. Iwai

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引用次数: 3

摘要

本文采用霍尔测量方法对等离子体掺杂和脉冲rta或闪光灯退火(FLA)活化形成的浅B掺杂层进行了表征，并结合掺杂方法和活化过程对这些层中的载流子迁移率和活化率进行了评价。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of conductivity in ultra-shallow p/sup +/ layers formed by plasma doping

In this work, the shallow B doped layers formed by plasma doping and activation process using spike-RTA or flash lamp annealing (FLA) were characterized by Hall measurement, and carrier mobility and activation rate in these layers are evaluated in conjunction with doping method and activation process.

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Extended Abstracts of the Fifth International Workshop on Junction Technology

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