EUV时代的高级节点DTCO

A. Wei, C. Wallace, M. Phillips, J. Knudsen, S. Chakravarty, M. Shamanna, R. Brain
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引用次数: 1

摘要

EUV光刻技术终于进入了大批量生产,这重新设定了前沿设计技术协同优化的方法。ArF沉浸式光刻多通道模式将推动技术设计规则变得如此严格,以至于设计优化将成为第二优先事项。EUV光刻技术恢复了性能、功率和面积规模的设计优化,以及产量和成本的技术优化之间的平衡。然而,由于EUV的引入较晚,这种平衡可能是短暂的,并且高度期待EUV光刻能力的进一步快速改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced Node DTCO in the EUV Era
EUV lithography has finally made it into high-volume manufacturing and this has reset the approach to leading-edge Design Technology Co-Optimization. ArF immersion lithography multi-pass patterning was on course to push the technology design rules to be so restrictive, that design optimization would become a clear second priority. EUV lithography restores the balance between design optimization for performance, power, and area scale, along with technology optimization for yield and cost. However, due to the late introduction of EUV, this balance may be short-lived, and further rapid improvement in EUV lithography capability is highly anticipated.
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