Carbon Nanotube Field Effect Transistors: An Aspect of Low Power and High Frequency Applications of CNTFETs

This paper reviews, analyzes and proposes a new method for high frequency applications of carbon nanotube field effect Transistors (CNTFETs) with validation based of the simulation results for high frequency applications, which are promising technology for High-performance electronic devices. CNTFETs face several challenges due to their nanometer dimensions, including issues with leakage current, power consumption regulation, switching speed, and short channel effects like drain-induced barrier lowering (DIBL) and sub-threshold swing (SS). In this respect Low power CNTFET devices are of particular interest and will result in an enhanced and efficient battery life in modern portable smartphones and devices. With the increasing demand for high-speed and high-performance electronic devices, CNTFET technology is emerging as a promising field of research, especially in the context of 5G technology. Here, various methods, approaches, and strategies have been discussed to address the issues related to the performance of the device. By analyzing and discussing these new approaches published in the literature, researchers can identify the most effective strategies for improving the performance of electronic devices, including CNTFETs. Some of the new approaches that have been discussed in the literature including the use of novel materials for CNTFET Fabrication, such as graphene and other 2D materials, as well as the development of new device architectures that can reduce power consumption and improve switching speed. Other strategies include optimizing the gain, doping concentration and channel length of CNTFETs with respect to the operating frequency along with a dedicated emphasis on exploring the nascent techniques to reduce leakage current and minimize short-channel effects. A general conclusion is also presented that is based on comparison of contemporary technologies. Researchers in the field of electronic solid state devices, especially those working on CNTFET circuit design and fabrication, could benefit from these findings. Index Terms— Carbon Nanotubes, field-effect transistor.