超高速波导集成锗光电探测器

2021 European Conference on Optical Communication (ECOC) Pub Date : 2021-09-13 DOI:10.1109/ecoc52684.2021.9606091

S. Lischke, A. Peczek, D. Steckler, F. Korndörfer, J. Morgan, A. Beling, L. Zimmermann

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引用次数: 2

摘要

我们提出了一种光电二极管，其中锗横向夹在互补的原位掺杂硅层之间。我们在1550 nm处展示了3-dB带宽≥110 GHz，响应度为0.6 A/W的光电，并首次展示了在1310 nm波长处的结果。

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Very High-Speed Waveguide Integrated Germanium Photo Detectors

We present a photodiode in which germanium is laterally sandwiched in between complementary in-situ doped silicon layers. We demonstrate optoelectrical 3-dB bandwidth ≥110 GHz with responsivities of 0.6 A/W at 1550 nm, and show, for the first time, results at 1310 nm wavelength.

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2021 European Conference on Optical Communication (ECOC)

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