铁电体和薄膜材料的微波研究

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) Pub Date : 2001-09-10 DOI:10.1109/CRMICO.2001.961686

Beomjin Kim, Minki Jeong, S. Baik, V. Kazmirenko, Y. Prokopenko, L. Pereverzeva, Y. Poplavko

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引用次数: 1

摘要

提出了一种测量块状和薄膜铁电材料微波特性的方法。通过网络分析仪测得的s参数的频率(f)依赖性，可以得到介质常数/spl epsiv/ /spl sim/ 10/sup 2/ -10/sup 3/和损耗tan/spl delta/ /spl sim/ 1-10/sup -3/。应根据敏感性调查S/sub 11/(f)或S/sub 21/(f)的相关性。所研究的薄膜沉积在介电基底上，薄膜-衬底“三明治”位于波导的中心。通过编写软件，得到了这种“三明治”散射参数，由此可以计算出薄膜/spl epsi/和tan/spl delta/。该方法不需要电极沉积，因此可以在膜处理的各个阶段获得膜的介电常数和损耗。

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Microwave investigation of ferroelectric bulk and film materials

A method for measuring microwave properties of bulk and film ferroelectric materials has been developed. Waveguide is partially filled by studied material samples, whose dielectric constant /spl epsiv/ /spl sim/ 10/sup 2/ - 10/sup 3/ and losses tan/spl delta/ /spl sim/ 1-10/sup -3/ can be found from the frequency (f) dependence of S-parameters measured by network analyzer. S/sub 11/(f) or S/sub 21/(f) dependencies should be investigated in dependence on sensitivity. Studied films are deposited onto dielectric substrates, and film-on-substrate "sandwich" is centrally located in the waveguide. Software was elaborated to get this "sandwich" scattering parameters, from which film /spl epsi/ and tan/spl delta/ can be calculated. Proposed method of the film investigation requires no electrode deposition, so film dielectric constant and loss might be obtained at various stages of film processing.

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11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)

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