砷化镓三阶高低掺杂沟道场效应晶体管

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496348

Wen-Chau Liu, J. Tsai, Lih-Wen, K. Thei, Chang-Zn Wu, W. Lour, Yuan-Tzu, Rong-Chau Liu

{"title":"砷化镓三阶高低掺杂沟道场效应晶体管","authors":"Wen-Chau Liu, J. Tsai, Lih-Wen, K. Thei, Chang-Zn Wu, W. Lour, Yuan-Tzu, Rong-Chau Liu","doi":"10.1109/TENCON.1995.496348","DOIUrl":null,"url":null,"abstract":"A fabricated camel-gate FET with a tri-step doping channel exhibits a large drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5 V. A 1.5/spl times/100 /spl mu/m/sup 2/ gate dimension device was found to have a f/sub T/ of about 30 GHz with very low input capacitance.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaAs tri-step high-low doping channel field effect transistor\",\"authors\":\"Wen-Chau Liu, J. Tsai, Lih-Wen, K. Thei, Chang-Zn Wu, W. Lour, Yuan-Tzu, Rong-Chau Liu\",\"doi\":\"10.1109/TENCON.1995.496348\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fabricated camel-gate FET with a tri-step doping channel exhibits a large drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5 V. A 1.5/spl times/100 /spl mu/m/sup 2/ gate dimension device was found to have a f/sub T/ of about 30 GHz with very low input capacitance.\",\"PeriodicalId\":425138,\"journal\":{\"name\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.1995.496348\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496348","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

一种具有三阶掺杂通道的骆驼栅极场效应管的漏极电流密度高达50750ma /mm。此外，相对电压无关的跨导高达220 mS/mm，外加栅极电压高达+1.5 V。发现一个1.5/spl倍/100 /spl μ /m/sup 2/栅极尺寸器件的f/sub / T/约为30 GHz，输入电容非常低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

GaAs tri-step high-low doping channel field effect transistor

A fabricated camel-gate FET with a tri-step doping channel exhibits a large drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5 V. A 1.5/spl times/100 /spl mu/m/sup 2/ gate dimension device was found to have a f/sub T/ of about 30 GHz with very low input capacitance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

自引率

0.00%

发文量