基于故障的地面辐射电子系统上界可靠设计,包括介子、电子、质子和低能中子

E. Ibe, Tadanobu Toba, K. Shimbo, H. Taniguchi
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引用次数: 8

摘要

对中子、质子、介子、电子、伽马射线等环境辐射谱进行了深入研究。根据调查结果估计了130nm sram的软误差率,得出以下结论:(1)当介子穿过sram的p阱时,介子的电荷沉积相对较高,表明当临界电荷低于1fC时,电流器件已经受到影响。(2)当临界电荷降低到0.05fC时,电子和伽马射线可能会产生一定的影响,这表明CMOS器件至少在不久的将来是安全的,不会受到电子和伽马射线的软误差。(3)当临界电荷低于一定阈值时,介子和电子的软错误率急剧增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fault-based reliable design-on-upper-bound of electronic systems for terrestrial radiation including muons, electrons, protons and low energy neutrons
In-depth study on environmental radiation spectra of neutrons, protons, muons, electrons, gamma rays are carried out. Soft-error rates in 130nm SRAMs are estimated based on the survey results with the following conclusions: (1) Charge deposition by muons is relatively high when the muons penetrate p-wells in SRAMs, suggesting current devices have been already affected if the critical charge is below 1fC. (2) Electrons and gamma rays may have certain impacts when the critical charge reduces as low as 0.05fC, suggesting CMOS devices will be safe for at least near future against soft error by electrons and gamma rays. (3) Soft error rates due to both muons and electrons drastically increase as critical charge reduced below certain threshold values.
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