Paula López, A. J. G. Loureiro, E. Ferro, V. Brea, B. Rivas‐Murias
{"title":"利用传统CAD工具研究非典型半导体材料的热电特性","authors":"Paula López, A. J. G. Loureiro, E. Ferro, V. Brea, B. Rivas‐Murias","doi":"10.1109/EUROSIME.2016.7463314","DOIUrl":null,"url":null,"abstract":"Computer-aided design (CAD) simulation tools offer the advantage of integrating both thermal and electrical simulations facilitating the study of new materials and structures. In this work, we demonstrate the possibility of using conventional electron devices simulation tools to study the thermoelectrical properties of non-typical semiconductor materials, which allows to do predictive parametric analysis of novel device structures without costly experiments. This is illustrated without loss of generality for scandium nitride and strontium titanate. The simulated results are in good agreement with those reported in the literature.","PeriodicalId":438097,"journal":{"name":"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of the thermoelectric properties of non-typical semiconductor materials with conventional CAD tools\",\"authors\":\"Paula López, A. J. G. Loureiro, E. Ferro, V. Brea, B. Rivas‐Murias\",\"doi\":\"10.1109/EUROSIME.2016.7463314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Computer-aided design (CAD) simulation tools offer the advantage of integrating both thermal and electrical simulations facilitating the study of new materials and structures. In this work, we demonstrate the possibility of using conventional electron devices simulation tools to study the thermoelectrical properties of non-typical semiconductor materials, which allows to do predictive parametric analysis of novel device structures without costly experiments. This is illustrated without loss of generality for scandium nitride and strontium titanate. The simulated results are in good agreement with those reported in the literature.\",\"PeriodicalId\":438097,\"journal\":{\"name\":\"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUROSIME.2016.7463314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2016.7463314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of the thermoelectric properties of non-typical semiconductor materials with conventional CAD tools
Computer-aided design (CAD) simulation tools offer the advantage of integrating both thermal and electrical simulations facilitating the study of new materials and structures. In this work, we demonstrate the possibility of using conventional electron devices simulation tools to study the thermoelectrical properties of non-typical semiconductor materials, which allows to do predictive parametric analysis of novel device structures without costly experiments. This is illustrated without loss of generality for scandium nitride and strontium titanate. The simulated results are in good agreement with those reported in the literature.