{"title":"InGaAsP/InP DFB DH激光器I-V测量二极管参数和阈值电流的测定","authors":"B. Kanack, K. Alavi, A. Appelbaum, C. Jiang","doi":"10.1109/ICIPRM.1990.203027","DOIUrl":null,"url":null,"abstract":"An accurate, temperature-dependent model has been developed for the DC I-V characteristic of an InP-based double heterojunction (DH) laser by parameter extraction using the ideal diode equation model. The parameters of the ideal diode equation can then be used to determine junction quality and reproducibility. The change in device parasitic resistance has been measured and its temperature dependence found. A relationship between threshold current and ideality factor is proposed. The deviation between the measured and modeled I-V characteristic can be used to determine threshold current accurately, independently of optical measurements.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Determination of diode parameters and threshold current from I-V measurements of InGaAsP/InP DFB DH lasers\",\"authors\":\"B. Kanack, K. Alavi, A. Appelbaum, C. Jiang\",\"doi\":\"10.1109/ICIPRM.1990.203027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An accurate, temperature-dependent model has been developed for the DC I-V characteristic of an InP-based double heterojunction (DH) laser by parameter extraction using the ideal diode equation model. The parameters of the ideal diode equation can then be used to determine junction quality and reproducibility. The change in device parasitic resistance has been measured and its temperature dependence found. A relationship between threshold current and ideality factor is proposed. The deviation between the measured and modeled I-V characteristic can be used to determine threshold current accurately, independently of optical measurements.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determination of diode parameters and threshold current from I-V measurements of InGaAsP/InP DFB DH lasers
An accurate, temperature-dependent model has been developed for the DC I-V characteristic of an InP-based double heterojunction (DH) laser by parameter extraction using the ideal diode equation model. The parameters of the ideal diode equation can then be used to determine junction quality and reproducibility. The change in device parasitic resistance has been measured and its temperature dependence found. A relationship between threshold current and ideality factor is proposed. The deviation between the measured and modeled I-V characteristic can be used to determine threshold current accurately, independently of optical measurements.<>
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