{"title":"2.4 GHz SiGe双极功率放大器，集成二极管线性放大器，用于WLAN IEEE 802.11b/g应用","authors":"J.H. Kim, K.Y. Kim, Y.H. Park, Y. Chung, C. Park","doi":"10.1109/RWS.2006.1615146","DOIUrl":null,"url":null,"abstract":"A linear RF power amplifier with integrated reverse biased diode linearizer for IEEE 802.11b/g WLAN terminals is implemented with a 33 GHz-fT, 0.5-mum-SiGe bipolar technology. The proposed linearizer maintains the fixed base voltage of power stage HBTs. The power amplifier exhibits 24.5 dBm of 1-dB compression point (P1dB), with 36% of the power-added efficiency (PAE), and 17 dB of the power gain under 3.3 V power supply. The third-order IMD value is less than - 32.5 dBc at 3 dB back-off from P1dB for the frequency of 2.45 GHz. The fabricated chip size is as small as 1times0.7 mm2, including input/inter-stage matching network and all active bias circuits","PeriodicalId":244560,"journal":{"name":"2006 IEEE Radio and Wireless Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A 2.4 GHz SiGe bipolar power amplifier with integrated diode linearizer for WLAN IEEE 802.11b/g applications\",\"authors\":\"J.H. Kim, K.Y. Kim, Y.H. Park, Y. Chung, C. Park\",\"doi\":\"10.1109/RWS.2006.1615146\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A linear RF power amplifier with integrated reverse biased diode linearizer for IEEE 802.11b/g WLAN terminals is implemented with a 33 GHz-fT, 0.5-mum-SiGe bipolar technology. The proposed linearizer maintains the fixed base voltage of power stage HBTs. The power amplifier exhibits 24.5 dBm of 1-dB compression point (P1dB), with 36% of the power-added efficiency (PAE), and 17 dB of the power gain under 3.3 V power supply. The third-order IMD value is less than - 32.5 dBc at 3 dB back-off from P1dB for the frequency of 2.45 GHz. The fabricated chip size is as small as 1times0.7 mm2, including input/inter-stage matching network and all active bias circuits\",\"PeriodicalId\":244560,\"journal\":{\"name\":\"2006 IEEE Radio and Wireless Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Radio and Wireless Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2006.1615146\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Radio and Wireless Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2006.1615146","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.4 GHz SiGe bipolar power amplifier with integrated diode linearizer for WLAN IEEE 802.11b/g applications
A linear RF power amplifier with integrated reverse biased diode linearizer for IEEE 802.11b/g WLAN terminals is implemented with a 33 GHz-fT, 0.5-mum-SiGe bipolar technology. The proposed linearizer maintains the fixed base voltage of power stage HBTs. The power amplifier exhibits 24.5 dBm of 1-dB compression point (P1dB), with 36% of the power-added efficiency (PAE), and 17 dB of the power gain under 3.3 V power supply. The third-order IMD value is less than - 32.5 dBc at 3 dB back-off from P1dB for the frequency of 2.45 GHz. The fabricated chip size is as small as 1times0.7 mm2, including input/inter-stage matching network and all active bias circuits
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