V. Y. Grisyk, V. Gaman, V.I. Baljuba, T. Davidova, V. Kalygina, I. Lobanov
{"title":"气敏硅基mos二极管对氢气的响应特性研究","authors":"V. Y. Grisyk, V. Gaman, V.I. Baljuba, T. Davidova, V. Kalygina, I. Lobanov","doi":"10.1109/SIBCON.2007.371324","DOIUrl":null,"url":null,"abstract":"The main conditions of physical model of hydrogen influence on Pd-SiO<sub>2</sub>-n-Si MOS-diodes are presented. It is proposed that hydrogen atoms (H<sub>a</sub>) occurred due to dissociation of H<sub>2</sub> molecules on the surface of Pd electrode diffuse through Pd and SiO<sub>2</sub> layers and are adsorbed on Pd-SiO<sub>2</sub> and SiO<sub>2</sub>-n-Si boundaries. It has been showed that in contrast to MOS-capacitor the response to hydrogen is generated due to the processes on the both boundaries.","PeriodicalId":131657,"journal":{"name":"2007 Siberian Conference on Control and Communications","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characteristic Properties of Response of Gas Sensor Si-Based MOS-Diode to Hydrogen\",\"authors\":\"V. Y. Grisyk, V. Gaman, V.I. Baljuba, T. Davidova, V. Kalygina, I. Lobanov\",\"doi\":\"10.1109/SIBCON.2007.371324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The main conditions of physical model of hydrogen influence on Pd-SiO<sub>2</sub>-n-Si MOS-diodes are presented. It is proposed that hydrogen atoms (H<sub>a</sub>) occurred due to dissociation of H<sub>2</sub> molecules on the surface of Pd electrode diffuse through Pd and SiO<sub>2</sub> layers and are adsorbed on Pd-SiO<sub>2</sub> and SiO<sub>2</sub>-n-Si boundaries. It has been showed that in contrast to MOS-capacitor the response to hydrogen is generated due to the processes on the both boundaries.\",\"PeriodicalId\":131657,\"journal\":{\"name\":\"2007 Siberian Conference on Control and Communications\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Siberian Conference on Control and Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON.2007.371324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Siberian Conference on Control and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2007.371324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characteristic Properties of Response of Gas Sensor Si-Based MOS-Diode to Hydrogen
The main conditions of physical model of hydrogen influence on Pd-SiO2-n-Si MOS-diodes are presented. It is proposed that hydrogen atoms (Ha) occurred due to dissociation of H2 molecules on the surface of Pd electrode diffuse through Pd and SiO2 layers and are adsorbed on Pd-SiO2 and SiO2-n-Si boundaries. It has been showed that in contrast to MOS-capacitor the response to hydrogen is generated due to the processes on the both boundaries.