{"title":"具有优化转换效率的60GHz CMOS-APD光电混频器","authors":"Jae-Young Kim, Myung-Jae Lee, W. Choi","doi":"10.1109/MWP.2010.5664195","DOIUrl":null,"url":null,"abstract":"A harmonic optoelectronic mixer based on CMOS avalanche photodiode is designed for optimized conversion efficiency in 60-GHz band. By reducing P-N junction capacitance in the avalanche photo-detection region and parasitic n-well/substrate capacitance, the supplied 30-GHz LO is efficiently converted to the 60-GHz harmonic LO signal and generates up-converted RF signals from optical IF. In addition, the silicide layer under the metal contact reduces the parasitic resistance and enhances the mixer conversion efficiency.","PeriodicalId":370693,"journal":{"name":"2010 IEEE International Topical Meeting on Microwave Photonics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"60GHz CMOS-APD optoelectronic mixers with optimized conversion efficiency\",\"authors\":\"Jae-Young Kim, Myung-Jae Lee, W. Choi\",\"doi\":\"10.1109/MWP.2010.5664195\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A harmonic optoelectronic mixer based on CMOS avalanche photodiode is designed for optimized conversion efficiency in 60-GHz band. By reducing P-N junction capacitance in the avalanche photo-detection region and parasitic n-well/substrate capacitance, the supplied 30-GHz LO is efficiently converted to the 60-GHz harmonic LO signal and generates up-converted RF signals from optical IF. In addition, the silicide layer under the metal contact reduces the parasitic resistance and enhances the mixer conversion efficiency.\",\"PeriodicalId\":370693,\"journal\":{\"name\":\"2010 IEEE International Topical Meeting on Microwave Photonics\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Topical Meeting on Microwave Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWP.2010.5664195\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Topical Meeting on Microwave Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWP.2010.5664195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
60GHz CMOS-APD optoelectronic mixers with optimized conversion efficiency
A harmonic optoelectronic mixer based on CMOS avalanche photodiode is designed for optimized conversion efficiency in 60-GHz band. By reducing P-N junction capacitance in the avalanche photo-detection region and parasitic n-well/substrate capacitance, the supplied 30-GHz LO is efficiently converted to the 60-GHz harmonic LO signal and generates up-converted RF signals from optical IF. In addition, the silicide layer under the metal contact reduces the parasitic resistance and enhances the mixer conversion efficiency.
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