使用记忆状态开关技术的退磁逆变器

I. Pitel
{"title":"使用记忆状态开关技术的退磁逆变器","authors":"I. Pitel","doi":"10.1109/IAS.1988.25174","DOIUrl":null,"url":null,"abstract":"Memory state switching is applied to a transient-mode inverter exciting three pairs of Helmholtz coils. The inverter, deploying four transistors and three TRIACS, generates nonrepetitive, orthogonal magnetic fields. Power semiconductor states are predetermined through analysis, digitized, and programmed into an EPROM (erasable programmable read-only memory). The EPROM is then cycled to produce the desired results. The system is intended for demagnetizing ferromagnetic materials in random orientation. Results are presented for an inverter producing a magnetizing force of 350 Oe.<<ETX>>","PeriodicalId":274766,"journal":{"name":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Demagnetizing inverter using memory state switching techniques\",\"authors\":\"I. Pitel\",\"doi\":\"10.1109/IAS.1988.25174\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Memory state switching is applied to a transient-mode inverter exciting three pairs of Helmholtz coils. The inverter, deploying four transistors and three TRIACS, generates nonrepetitive, orthogonal magnetic fields. Power semiconductor states are predetermined through analysis, digitized, and programmed into an EPROM (erasable programmable read-only memory). The EPROM is then cycled to produce the desired results. The system is intended for demagnetizing ferromagnetic materials in random orientation. Results are presented for an inverter producing a magnetizing force of 350 Oe.<<ETX>>\",\"PeriodicalId\":274766,\"journal\":{\"name\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1988.25174\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1988.25174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

将记忆态开关应用于三对亥姆霍兹线圈励磁的瞬态逆变器。逆变器,部署四个晶体管和三个TRIACS,产生不重复的,正交磁场。功率半导体状态是预先确定通过分析,数字化,并编程到EPROM(可擦除可编程只读存储器)。然后循环EPROM以产生期望的结果。该系统用于在随机方向上对铁磁性材料退磁。给出了一种产生350欧安磁化力的逆变器的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Demagnetizing inverter using memory state switching techniques
Memory state switching is applied to a transient-mode inverter exciting three pairs of Helmholtz coils. The inverter, deploying four transistors and three TRIACS, generates nonrepetitive, orthogonal magnetic fields. Power semiconductor states are predetermined through analysis, digitized, and programmed into an EPROM (erasable programmable read-only memory). The EPROM is then cycled to produce the desired results. The system is intended for demagnetizing ferromagnetic materials in random orientation. Results are presented for an inverter producing a magnetizing force of 350 Oe.<>
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