P. Colantonio, F. Giannini, E. Limiti, A. Nanni, V. Camarchia, V. Teppati, M. Pirola
{"title":"微波功率放大器设计中的线性度和效率优化","authors":"P. Colantonio, F. Giannini, E. Limiti, A. Nanni, V. Camarchia, V. Teppati, M. Pirola","doi":"10.1109/emicc.2007.4412704","DOIUrl":null,"url":null,"abstract":"In this contribution the minimisation of asymmetry between lower and upper side band intermodulation products will be discussed, starting from a Volterra analysis approach. Base-band and harmonic device terminations effects will be analysed, identifying novel conditions minimising IMD asymmetry and IM3 power levels. Such conditions, not relying on base-band terminations, are the basis for IM3 products minimisation via second harmonic load selection. The proposed criterion is then verified by harmonic load-pull measurements on a GaN HEMT under two-tone excitation. Measurements agree with the analysis, demonstrating a null IMD asymmetry and 6 dBc increase in C/I3, without affecting output power (34 dBm @ 1dB compression) and power added efficiency performance (65% @ 1 dB compression).","PeriodicalId":448587,"journal":{"name":"2007 European Conference on Wireless Technologies","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Linearity and Efficiency Optimisation in Microwave Power Amplifier Design\",\"authors\":\"P. Colantonio, F. Giannini, E. Limiti, A. Nanni, V. Camarchia, V. Teppati, M. Pirola\",\"doi\":\"10.1109/emicc.2007.4412704\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this contribution the minimisation of asymmetry between lower and upper side band intermodulation products will be discussed, starting from a Volterra analysis approach. Base-band and harmonic device terminations effects will be analysed, identifying novel conditions minimising IMD asymmetry and IM3 power levels. Such conditions, not relying on base-band terminations, are the basis for IM3 products minimisation via second harmonic load selection. The proposed criterion is then verified by harmonic load-pull measurements on a GaN HEMT under two-tone excitation. Measurements agree with the analysis, demonstrating a null IMD asymmetry and 6 dBc increase in C/I3, without affecting output power (34 dBm @ 1dB compression) and power added efficiency performance (65% @ 1 dB compression).\",\"PeriodicalId\":448587,\"journal\":{\"name\":\"2007 European Conference on Wireless Technologies\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Conference on Wireless Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/emicc.2007.4412704\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Conference on Wireless Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/emicc.2007.4412704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Linearity and Efficiency Optimisation in Microwave Power Amplifier Design
In this contribution the minimisation of asymmetry between lower and upper side band intermodulation products will be discussed, starting from a Volterra analysis approach. Base-band and harmonic device terminations effects will be analysed, identifying novel conditions minimising IMD asymmetry and IM3 power levels. Such conditions, not relying on base-band terminations, are the basis for IM3 products minimisation via second harmonic load selection. The proposed criterion is then verified by harmonic load-pull measurements on a GaN HEMT under two-tone excitation. Measurements agree with the analysis, demonstrating a null IMD asymmetry and 6 dBc increase in C/I3, without affecting output power (34 dBm @ 1dB compression) and power added efficiency performance (65% @ 1 dB compression).
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
