新型溅射ZnO薄膜声传感器的研制

N SumaM, M. Prasad, V. Gaddam, K. Rajanna, M. Nayak
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引用次数: 6

摘要

本文报道了用于声传感器的ZnO薄膜的制备和表征。采用射频反应磁控溅射法制备了厚度约680 nm的ZnO薄膜。利用x射线衍射(XRD)和扫描电镜(SEM)对膜的微观结构和形貌进行了表征。采用标准电声校准器对ZnO薄膜的传感性能进行了研究。合成的ZnO薄膜在不同声压级下产生显著的压电电压输出。本研究表明了溅射ZnO薄膜在声传感器中的适用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of a Novel Acoustic Sensor using Sputtered ZnO Thin Film
In this paper we report fabrication and characterization of ZnO thin film for acoustic sensor application. ZnO thin film of thickness about 680 nm was deposited using RF reactive magnetron sputtering. This film was characterized using X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) for its microstructure and morphology. The sensing property of the ZnO thin film was investigated using a standard electro-acoustic calibrator. The as-synthesized ZnO thin film produced noticeable piezoelectric voltage output for different Sound Pressure Levels. This study indicated the suitability of sputtered ZnO thin film for acoustic sensor application.
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