{"title":"mHEMT MMIC技术中的全w波段高增益LNA","authors":"W. Ciccognani, F. Giannini, E. Limiti, P. Longhi","doi":"10.1109/EMICC.2008.4772292","DOIUrl":null,"url":null,"abstract":"In this contribution the possible applications, technology, design and measurements of a W-Band high gain LNA are given. The main features of the four stage LNA can be summarised as following: a 25 dB average gain with plusmn2 dB ripple from 70 to 105 GHz, where gain is higher than 21 dB on the entire 70-110 GHz range. LNA predicted noise figure is 2.7 dB between 80 and 95GHz and less than 3.2 dB up to 108 GHz while the chip's power consumption is 35 mW. The technology used is a 70 nm GaAs mHEMT process from OMMIC.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Full W-Band High-Gain LNA in mHEMT MMIC Technology\",\"authors\":\"W. Ciccognani, F. Giannini, E. Limiti, P. Longhi\",\"doi\":\"10.1109/EMICC.2008.4772292\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this contribution the possible applications, technology, design and measurements of a W-Band high gain LNA are given. The main features of the four stage LNA can be summarised as following: a 25 dB average gain with plusmn2 dB ripple from 70 to 105 GHz, where gain is higher than 21 dB on the entire 70-110 GHz range. LNA predicted noise figure is 2.7 dB between 80 and 95GHz and less than 3.2 dB up to 108 GHz while the chip's power consumption is 35 mW. The technology used is a 70 nm GaAs mHEMT process from OMMIC.\",\"PeriodicalId\":344657,\"journal\":{\"name\":\"2008 European Microwave Integrated Circuit Conference\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2008.4772292\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Full W-Band High-Gain LNA in mHEMT MMIC Technology
In this contribution the possible applications, technology, design and measurements of a W-Band high gain LNA are given. The main features of the four stage LNA can be summarised as following: a 25 dB average gain with plusmn2 dB ripple from 70 to 105 GHz, where gain is higher than 21 dB on the entire 70-110 GHz range. LNA predicted noise figure is 2.7 dB between 80 and 95GHz and less than 3.2 dB up to 108 GHz while the chip's power consumption is 35 mW. The technology used is a 70 nm GaAs mHEMT process from OMMIC.
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