640x512-5μm InGaAs短波红外焦平面读出电路的研究

Yifan Lu, Hongyi Wang, Wengang Tao, Songlei Huang, Xue Li
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引用次数: 0

摘要

为了适应第三代红外焦平面读出电路设计,本文设计了一种基于0.18μm标准技术的640x512-5μm InGaAs短波红外焦平面读出电路设计。在对各模块进行分析的基础上,重点对阵列的像素单元和读出方式进行设计。采用伪相关双采样技术实现降噪和增益放大。最后,设计了四通道输出仿真电路。仿真结果显示,读出率为10MHz,系统默认工作帧频率为54Hz,输出摆幅为1.7V,线性度大于99.9%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Research on 640x512-5μm InGaAs short-wave infrared focal plane readout circuit
In order to adapt to the third generation of infrared focal plane readout circuit design, this paper designs a 640x512-5μm InGaAs short-wave infrared focal plane readout circuit design based on 0.18μm standard technology. Based on the analysis of each module, the design focuses on the pixel unit and the readout mode of the array. Noise reduction and gain amplification are realized by pseudo correlation double sampling technology. Finally, the design of four - channel output simulation circuit. According to the simulation results, the readout rate is 10MHz, the system default working frame frequency is 54Hz, the output swing is 1.7V, and the linearity is more than 99.9%.
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