用于小灵通的低电流损耗伪晶MODFET MMIC功率放大器，工作电压为3.5 V

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567817

T. Yokoyama, T. Kunihisa, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, O. Ishikawa

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引用次数: 18

摘要

研制了一种用于小灵通的3.5 V单电压低功耗MMIC功率放大器。该MMIC利用伪晶双异质结调制掺杂场效应管(P-MODFET)实现单电压工作和低工作电流同时实现。在单电压供电条件下，输出功率为21.5 dBm，工作电流为141 mA，相邻通道漏功率为-56.1 dBc。该工作电流是已报道的用于小灵通的单电压操作MMIC功率放大器的最低值之一。

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Low current dissipation pseudomorphic MODFET MMIC power amplifier for PHS operating with a 3.5 V single voltage supply

A low current dissipation MMIC power amplifier operating with a 3.5 V single voltage supply has been developed for PHS. This MMIC utilizes a pseudomorphic double heterojunction modulation doped FET (P-MODFET) to realize single voltage operation and low operating current simultaneously. It exhibits very low operating current of 141 mA at the output power of 21.5 dBm with low adjacent channel leakage power of -56.1 dBc in the single voltage supply condition. This operating current is one of the lowest values that have been reported on the single voltage operation MMIC power amplifiers for PHS.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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