SELBOX结构CMOS静态功耗建模与仿真

2017 7th International Conference on Modeling, Simulation, and Applied Optimization (ICMSAO) Pub Date : 2017-04-01 DOI:10.1109/ICMSAO.2017.7934870

D. Younis, Narayanan Madathumpadical, H. Al-Nashash

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引用次数: 2

摘要

选择性埋地氧化MOSFET (SELBOX)结构减少了与绝缘体上硅(SOI) MOSFET相关的自热和扭结效应挑战。SELBOX结构也比BULK MOSFET消耗更少的静态功率，同时保持高工作速度。在本文中，我们提出了一个描述静态功耗降低的模型。利用Silvaco TCAD工具对SELBOX、SOI和BULK MODFET器件进行了设计和仿真。给出了仿真结果，并与模型结果进行了比较。

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Modeling and simulation of static power dissipation in CMOS with SELBOX structure

SELective Buried OXide MOSFET (SELBOX) structure reduces the self-heating and kink effect challenges linked with the Silicon on Insulator (SOI) MOSFET. The SELBOX structure also dissipates less static power than the BULK MOSFET while maintaining a high operating speed. In this paper, we present a model that describes the reduction in static power dissipation. SELBOX, SOI and BULK MODFET devices are designed and simulated with Silvaco TCAD tools. Simulation results are also presented and compared with the model results.

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来源期刊

2017 7th International Conference on Modeling, Simulation, and Applied Optimization (ICMSAO)

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