考虑 14 纳米 FinFET 电路老化和产品验证中的物理机制和几何相关性

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409744

S. Pae, H. Sagong, C. Liu, M. Jin, Y. H. Kim, S. Choo, J. J. Kim, H. J. Kim, S. Yoon, H. Nam, H. Shim, S. M. Park, J. Park, S. Shin, J. Park

{"title":"考虑 14 纳米 FinFET 电路老化和产品验证中的物理机制和几何相关性","authors":"S. Pae, H. Sagong, C. Liu, M. Jin, Y. H. Kim, S. Choo, J. J. Kim, H. J. Kim, S. Yoon, H. Nam, H. Shim, S. M. Park, J. Park, S. Shin, J. Park","doi":"10.1109/IEDM.2015.7409744","DOIUrl":null,"url":null,"abstract":"We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product design and qualifications. We show that along with increased AFs and optimized product HTOL stress conditions, 5-10x more efficiency in time has been achieved. In addition, external mechanical strain on Fin reliability will be discussed.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Considering physical mechanisms and geometry dependencies in 14nm FinFET circuit aging and product validations\",\"authors\":\"S. Pae, H. Sagong, C. Liu, M. Jin, Y. H. Kim, S. Choo, J. J. Kim, H. J. Kim, S. Yoon, H. Nam, H. Shim, S. M. Park, J. Park, S. Shin, J. Park\",\"doi\":\"10.1109/IEDM.2015.7409744\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product design and qualifications. We show that along with increased AFs and optimized product HTOL stress conditions, 5-10x more efficiency in time has been achieved. In addition, external mechanical strain on Fin reliability will be discussed.\",\"PeriodicalId\":336637,\"journal\":{\"name\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2015.7409744\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409744","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 22

摘要

我们报告了广泛的 14 纳米 FinFET 可靠性鉴定工作，并提供了物理机制和几何依赖性。与设计中使用的鳍片数量相关的 BTI、HCI 变异以及自热考虑因素对于产品设计和鉴定至关重要。我们的研究表明，在增加 AF 和优化产品 HTOL 应力条件的同时，还实现了 5-10 倍的时间效率。此外，我们还将讨论外部机械应变对翅片可靠性的影响。

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Considering physical mechanisms and geometry dependencies in 14nm FinFET circuit aging and product validations

We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product design and qualifications. We show that along with increased AFs and optimized product HTOL stress conditions, 5-10x more efficiency in time has been achieved. In addition, external mechanical strain on Fin reliability will be discussed.

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2015 IEEE International Electron Devices Meeting (IEDM)

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