具有高导通电流和陡SS的双源u型栅极隧道场效应管

2016 16th International Workshop on Junction Technology (IWJT) Pub Date : 2016-05-09 DOI:10.1109/IWJT.2016.7486666

Zhi Jiang, Y. Zhuang, Cong Li, Ping Wang

{"title":"具有高导通电流和陡SS的双源u型栅极隧道场效应管","authors":"Zhi Jiang, Y. Zhuang, Cong Li, Ping Wang","doi":"10.1109/IWJT.2016.7486666","DOIUrl":null,"url":null,"abstract":"The current-voltage characteristics of dual source regions and U-shape-gate tunneling field-effect transistor (DUTFET) is investigated. The U-shape-gate offers the enlarged tunneling area and steeper subthreshold swing (SS). The remarkable good performance makes it very attractive in replacing a conventional tunneling field-effect transistor (TFET), particularly for low-power applications.","PeriodicalId":117665,"journal":{"name":"2016 16th International Workshop on Junction Technology (IWJT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Dual sources U-shape gate tunnel FETs with high on-current and steep SS\",\"authors\":\"Zhi Jiang, Y. Zhuang, Cong Li, Ping Wang\",\"doi\":\"10.1109/IWJT.2016.7486666\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The current-voltage characteristics of dual source regions and U-shape-gate tunneling field-effect transistor (DUTFET) is investigated. The U-shape-gate offers the enlarged tunneling area and steeper subthreshold swing (SS). The remarkable good performance makes it very attractive in replacing a conventional tunneling field-effect transistor (TFET), particularly for low-power applications.\",\"PeriodicalId\":117665,\"journal\":{\"name\":\"2016 16th International Workshop on Junction Technology (IWJT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 16th International Workshop on Junction Technology (IWJT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2016.7486666\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 16th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2016.7486666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

研究了双源区和u型栅隧道场效应晶体管(DUTFET)的电流电压特性。u型闸板可扩大掘进面积，降低阈下摆幅。卓越的性能使其在取代传统的隧道场效应晶体管(TFET)方面非常有吸引力，特别是在低功耗应用中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Dual sources U-shape gate tunnel FETs with high on-current and steep SS

The current-voltage characteristics of dual source regions and U-shape-gate tunneling field-effect transistor (DUTFET) is investigated. The U-shape-gate offers the enlarged tunneling area and steeper subthreshold swing (SS). The remarkable good performance makes it very attractive in replacing a conventional tunneling field-effect transistor (TFET), particularly for low-power applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 16th International Workshop on Junction Technology (IWJT)

自引率

0.00%

发文量