辐照温度对硅太阳能电池光谱响应的影响

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI:10.1109/PVSC.1997.654243

J. Bourgoin

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引用次数: 2

摘要

作者描述了深空任务专用LILT, Si太阳能电池在10/sup 16/ cm/sup -2/， 1 MeV电子辐照下的光谱响应随辐照温度在80-300 K范围内的变化。由于光谱响应SR(/spl lambda/)与温度有关，因此退化以数量1-SR(/spl lambda/)/SR/sub 0/(/spl lambda/)给出，其中SR/sub 0/是未辐照电池的光谱响应。这些数据与辐照引起的短路电流变化有关。然后可以提取在不同温度下辐照引入的主要重组中心的信息。

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Effect of the irradiation temperature on the spectral response of Si solar cells

The authors describe the variation of the spectral response of LILT, Si solar cells especially designed for deep space missions irradiated with 10/sup 16/ cm/sup -2/, 1 MeV, electrons versus the temperature of irradiation in the range 80-300 K. Since the spectral response SR(/spl lambda/) is temperature dependent, the degradation is given in terms of the quantity 1-SR(/spl lambda/)/SR/sub 0/(/spl lambda/) where SR/sub 0/ is the spectral response of the unirradiated cell. These data are correlated with the changes induced by the irradiation in the short circuit current. Information on the main recombination centers introduced by the irradiation at various temperatures can then be extracted.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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