{"title":"基于40纳米节点CMOS工艺的超fme硅光子学制造技术","authors":"T. Horikawa, T. Mogami","doi":"10.1109/GROUP4.2015.7305906","DOIUrl":null,"url":null,"abstract":"The dimension control technology for silicon photonics devices based on 40-nm-node CMOS technology are reviewed. By using ArF immersion lithography in the fabrication technology, the high-level reproducihility in resonant wavelength of demultiplexers (σλ. <1 nm) was achieved, as well as extremely low propagation loss <0.5 dB/cm in silicon wire waveguide for TE single mode propagation in C-band.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ultra-fme Si photonics fabrication technology based on 40-nm-node CMOS process\",\"authors\":\"T. Horikawa, T. Mogami\",\"doi\":\"10.1109/GROUP4.2015.7305906\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The dimension control technology for silicon photonics devices based on 40-nm-node CMOS technology are reviewed. By using ArF immersion lithography in the fabrication technology, the high-level reproducihility in resonant wavelength of demultiplexers (σλ. <1 nm) was achieved, as well as extremely low propagation loss <0.5 dB/cm in silicon wire waveguide for TE single mode propagation in C-band.\",\"PeriodicalId\":244331,\"journal\":{\"name\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2015.7305906\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-fme Si photonics fabrication technology based on 40-nm-node CMOS process
The dimension control technology for silicon photonics devices based on 40-nm-node CMOS technology are reviewed. By using ArF immersion lithography in the fabrication technology, the high-level reproducihility in resonant wavelength of demultiplexers (σλ. <1 nm) was achieved, as well as extremely low propagation loss <0.5 dB/cm in silicon wire waveguide for TE single mode propagation in C-band.
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