{"title":"带隙能量温度依赖对带隙参考电压热系数的影响","authors":"S. Kazeminia, K. Hadidi, A. Khoei, M. Azarmanesh","doi":"10.1109/ECCTD.2011.6043383","DOIUrl":null,"url":null,"abstract":"In this paper the equations of basic bandgap reference (BGR) voltage circuits are reconstructed considering dependency of bandgap energy (E<inf>g</inf>) to absolute temperature. Notice that previous works all consider E<inf>g</inf> as a constant, independent of temperature variations. Dependence of bandgap energy to absolute temperature is firstly approximated by a second-degree polynomial using Lagrangian interpolating polynomial method in temperature range of 2°C to 92°C. Then the simplified polynomial is used to calculate the modified thermal coefficient (TC) of the base-emitter voltage (V<inf>BE</inf>) in BJT transistors. Accurate analysis of the resulted equations reveals that the TC of V<inf>BE</inf> must be corrected to −1.7mV/°K at 27°C ambient temperature which has been formerly reported about −1.5mV/°K ([2], [5]), −2mV/°K ([3], [9], [10]) and −2.2mV/°K ([4], [8]) where E<inf>g</inf> was assumed as a temperature-independent constant. More important, TC of V<inf>BE</inf> is derived to be −1.5mV/°K at 92°C rather than previously reported, −1.2mV/°K, a 20% error originated from constant E<inf>g</inf> assumption.","PeriodicalId":126960,"journal":{"name":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Effect of bandgap energy temperature dependence on thermal coefficient of bandgap reference voltage\",\"authors\":\"S. Kazeminia, K. Hadidi, A. Khoei, M. Azarmanesh\",\"doi\":\"10.1109/ECCTD.2011.6043383\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the equations of basic bandgap reference (BGR) voltage circuits are reconstructed considering dependency of bandgap energy (E<inf>g</inf>) to absolute temperature. Notice that previous works all consider E<inf>g</inf> as a constant, independent of temperature variations. Dependence of bandgap energy to absolute temperature is firstly approximated by a second-degree polynomial using Lagrangian interpolating polynomial method in temperature range of 2°C to 92°C. Then the simplified polynomial is used to calculate the modified thermal coefficient (TC) of the base-emitter voltage (V<inf>BE</inf>) in BJT transistors. Accurate analysis of the resulted equations reveals that the TC of V<inf>BE</inf> must be corrected to −1.7mV/°K at 27°C ambient temperature which has been formerly reported about −1.5mV/°K ([2], [5]), −2mV/°K ([3], [9], [10]) and −2.2mV/°K ([4], [8]) where E<inf>g</inf> was assumed as a temperature-independent constant. More important, TC of V<inf>BE</inf> is derived to be −1.5mV/°K at 92°C rather than previously reported, −1.2mV/°K, a 20% error originated from constant E<inf>g</inf> assumption.\",\"PeriodicalId\":126960,\"journal\":{\"name\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCTD.2011.6043383\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2011.6043383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of bandgap energy temperature dependence on thermal coefficient of bandgap reference voltage
In this paper the equations of basic bandgap reference (BGR) voltage circuits are reconstructed considering dependency of bandgap energy (Eg) to absolute temperature. Notice that previous works all consider Eg as a constant, independent of temperature variations. Dependence of bandgap energy to absolute temperature is firstly approximated by a second-degree polynomial using Lagrangian interpolating polynomial method in temperature range of 2°C to 92°C. Then the simplified polynomial is used to calculate the modified thermal coefficient (TC) of the base-emitter voltage (VBE) in BJT transistors. Accurate analysis of the resulted equations reveals that the TC of VBE must be corrected to −1.7mV/°K at 27°C ambient temperature which has been formerly reported about −1.5mV/°K ([2], [5]), −2mV/°K ([3], [9], [10]) and −2.2mV/°K ([4], [8]) where Eg was assumed as a temperature-independent constant. More important, TC of VBE is derived to be −1.5mV/°K at 92°C rather than previously reported, −1.2mV/°K, a 20% error originated from constant Eg assumption.