带隙能量温度依赖对带隙参考电压热系数的影响

S. Kazeminia, K. Hadidi, A. Khoei, M. Azarmanesh
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引用次数: 3

摘要

本文考虑带隙能量(Eg)与绝对温度的关系,重构了基本带隙参考电压电路的方程。注意,前面的工作都把Eg看作一个常数,不受温度变化的影响。在2℃~ 92℃的温度范围内,首先利用拉格朗日插值多项式方法,用二阶多项式逼近带隙能量与绝对温度的关系。然后利用简化多项式计算BJT晶体管基极-发射极电压的修正热系数(TC)。对所得方程的精确分析表明,在27°C环境温度下,VBE的TC必须校正为- 1.7mV/°K,而以前的报道约为- 1.5mV/°K ([2], [5]), - 2mV/°K([3],[9],[10])和- 2.2mV/°K([4],[8]),其中Eg假设为温度无关常数。更重要的是,在92°C时,VBE的TC为- 1.5mV/°K,而不是之前报道的- 1.2mV/°K,这是由于常数Eg假设造成的20%的误差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of bandgap energy temperature dependence on thermal coefficient of bandgap reference voltage
In this paper the equations of basic bandgap reference (BGR) voltage circuits are reconstructed considering dependency of bandgap energy (Eg) to absolute temperature. Notice that previous works all consider Eg as a constant, independent of temperature variations. Dependence of bandgap energy to absolute temperature is firstly approximated by a second-degree polynomial using Lagrangian interpolating polynomial method in temperature range of 2°C to 92°C. Then the simplified polynomial is used to calculate the modified thermal coefficient (TC) of the base-emitter voltage (VBE) in BJT transistors. Accurate analysis of the resulted equations reveals that the TC of VBE must be corrected to −1.7mV/°K at 27°C ambient temperature which has been formerly reported about −1.5mV/°K ([2], [5]), −2mV/°K ([3], [9], [10]) and −2.2mV/°K ([4], [8]) where Eg was assumed as a temperature-independent constant. More important, TC of VBE is derived to be −1.5mV/°K at 92°C rather than previously reported, −1.2mV/°K, a 20% error originated from constant Eg assumption.
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