具有横向共振隧道边界二极管的蒙特卡罗模型

2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) Pub Date : 2018-09-01 DOI:10.1109/UWBUSIS.2018.8520067

O. Botsula, K. Prykhodko, V. Zozulia

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引用次数: 5

摘要

研究了具有共振隧道边界(RTB)的二极管作为高速宽带器件。该二极管为平面双端n+-n-n+-GaAs结构，其横向有源边界为AlGaAs/GaAs双势垒谐振隧道结构，与阳极触点相连。提出了器件中电子输运的二维模型。利用集成蒙特卡罗技术对二极管的工作进行了分析。将传递矩阵法应用于隧道传输模拟。研究了RTB位置、AlGaAs势垒组成和材料掺杂等结构参数对二极管电流电压特性的影响。

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Monte Carlo Modeling of the Diodes with Lateral Resonant Tunneling Border

Diodes with resonant tunneling border (RTB) are studied as possible high speed and wide-band devices. The diodes represent planar two-terminal n+-n-n+-GaAs-based structures containing the lateral active border as a AlGaAs/GaAs double barrier resonant tunneling structure connected to anode contact. The 2-D model of electron transport in the device is proposed. The analysis of the diodes operation was performed using ensemble Monte Carlo technique. Transfer matrix approach for simulation of tunneling transfer is applied. The influence of parameters of the diode structure such as a position of RTB, a composition of AlGaAs barriers and a material doping on current - voltage characteristics of diode has been investigated.

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2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)

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