透射电子显微镜测定量子点轮廓

X. Liao, J. Zou, X. Duan, D. Cockayne, R. Leon, C. Lobo
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引用次数: 1

摘要

利用截面透射显微镜和[001]区上亮场成像模拟技术,研究了埋藏和未埋藏In/sub x/Ga/sub 1-x/As/GaAs量子点(QDs)的形貌。研究表明,埋地和未埋地的量子点均呈透镜状。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transmission electron microscopy determination of quantum dot profile
Investigation of the morphology of buried and unburied In/sub x/Ga/sub 1-x/As/GaAs quantum dots (QDs) has been carried out using cross-section transmission microscopy and the [001] on-zone bright-field technique with image simulation. The study shows that both the buried and unburied QDs are lens-shaped.
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