半导体微腔中盛装激子的辐射

Shi-an Liu, Shi-ming Lin, Qi-Ming Wang
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引用次数: 1

摘要

本文介绍了半导体微腔器件的盛装激子模型。在垂直腔面发射器件的半导体微腔中,激子首先通过内电磁场与腔耦合,形成盛装激子。然后这些修饰的激子作为一个多粒子过程衰变成真空腔光学模式。通过量子电动力学方法,得到了偶极子发射密度和系统能量衰减方程。并且预测当激子-腔耦合足够强时,激子会衰减到一个非常窄的模式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RADIATION OF DRESSED EXCITONS IN THE SEMICONDUCTOR MICROCAVITY
In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multiparticle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.
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