单片压控振荡器和混频器的q波段收发器采用基于inp的HBT工艺

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI:10.1109/MCS.1995.470981

L. Tran, J. Cowles, T. Block, Huei Wang, J. Yonaki, D. Lo, S. Dow, B. Allen, D. Streit, A. Oki, S. Loughran

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引用次数: 11

摘要

采用基于inp的HBT工艺，为q波段FMCW收发器应用开发了单片vco和混频器。对HBT压控振荡器的调谐范围、输出功率和相位噪声进行了表征，同时对肖特基二极管混频器的转换损耗和噪声系数进行了测量。与基于GaAs HBT工艺的类似设计相比，该VCO的相位噪声性能提高了10 db。在非常低的中频下测量，基于inp的肖特基二极管混频器的噪声系数比基于GaAs肖特基工艺的相同设计提高了1 dB以上。InP混频器还需要非常低的LO功率，仅为1 dBm，转换损耗为8 db。

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Monolithic VCO and mixer for Q-band transceiver using InP-based HBT process

Monolithic VCOs and mixers have been developed for Q-band FMCW transceiver applications using an InP-based HBT process. Tuning range, output power, and phase noise have been characterized for the HBT VCOs, while conversion loss and noise figure were measured for the Schottky diode mixers. The VCO shows 10-dB better phase noise performance over a similar design based on a GaAs HBT process. Measured at very low IF, the InP-based Schottky diode mixer demonstrates more than 1 dB noise figure improvement over the same design based on GaAs Schottky process. The InP mixer also requires a very low LO power at only 1 dBm for a 8-dB conversion loss.<>

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IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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