深亚微米nmosfet中热载子诱导漏极电流衰减的新观察

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) Pub Date : 2002-11-07 DOI:10.1109/IPFA.2002.1025607

J.F. Chen, C. Tsao

{"title":"深亚微米nmosfet中热载子诱导漏极电流衰减的新观察","authors":"J.F. Chen, C. Tsao","doi":"10.1109/IPFA.2002.1025607","DOIUrl":null,"url":null,"abstract":"Hot-carrier induced drain current degradation in 0.18 /spl mu/m nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.","PeriodicalId":328714,"journal":{"name":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new observation in hot-carrier induced drain current degradation in deep-sub-micrometer nMOSFETs\",\"authors\":\"J.F. Chen, C. Tsao\",\"doi\":\"10.1109/IPFA.2002.1025607\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot-carrier induced drain current degradation in 0.18 /spl mu/m nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.\",\"PeriodicalId\":328714,\"journal\":{\"name\":\"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2002.1025607\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2002.1025607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了0.18 /spl mu/m nmosfet中热载子引起的漏极电流衰减。结果表明，当漏极电压大于0.1 V时，漏极电流衰减最大。随着表征漏极电压的增加，这一新的观察结果归因于两种相互竞争的机制:通道反转电荷的减少，以及带电界面状态的减少。当器件在高温和正向体偏压下受力时，漏极电流衰减与表征漏极电压的特性更平坦。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A new observation in hot-carrier induced drain current degradation in deep-sub-micrometer nMOSFETs

Hot-carrier induced drain current degradation in 0.18 /spl mu/m nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)

自引率

0.00%

发文量