可控取向Co/Cu多层纳米线的电沉积

L. Tan, R. Cobian, B. Stadler, L. Wang, C. Leighton, P. Crowell
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引用次数: 1

摘要

本文采用模板辅助电化学沉积的方法,将不同取向的Co/Cu多层纳米线沉积到氧化铝纳米孔阵列中。结果表明,在沉积过程中施加磁场可以有效地影响钴层的晶体织构。巨磁电阻(GMR)效应随Cu厚度的减小而减小,但与多层膜系统不同。实际上,当Cu层厚度减小到约lnm时,观察到的是各向异性磁阻(AMR),而不是GMR。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrodeposition of Co/Cu Multilayered Nanowires with Controlled Crystallographic Orientation
In this work, Co/Cu multilayered nanowires with different crystallographic orientations were deposited by template-assisted electrochemical deposition into alumina nanopore arrays. Results showed that by applying magnetic fields during the deposition, the crystallographic texture of Co layers could be effectively influenced. The giant magnetoresistance (GMR) effect decreased with decreasing Cu thicknesses as was expected but which is different from multilayered-film systems. Actually, when the Cu layer thickness decreased to about lnm, anisotropic magnetoresistance (AMR) was observed instead of GMR.
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