{"title":"确定宽带可重构的恒定PIN二极管阻抗点","authors":"R. Caverly","doi":"10.1109/RWS45077.2020.9050092","DOIUrl":null,"url":null,"abstract":"Broadband, high power, fast switching RF control and reconfigurable circuits frequently use PIN diodes as the controlling element. An assumption often made by circuit designers is that the PIN diode resistance is constant over frequency (not considering parasitics). PIN diode impedance is influenced by the junctions and the I-region carrier lifetime (τ) at frequencies as high as several hundred MHz, and so a means to define the onset of the high frequency resistance will provide these designers a guideline for that constant-resistance assumption. This paper provides such a guideline and shows how measurements of PIN diode impedance as a function of frequency can provide this metric, which analysis shows to be approximately 10/πτ. The procedure is validated with measurements on packaged PIN diodes.","PeriodicalId":184822,"journal":{"name":"2020 IEEE Radio and Wireless Symposium (RWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Determining the Constant PIN Diode Impedance Point for Broadband Reconfigurability\",\"authors\":\"R. Caverly\",\"doi\":\"10.1109/RWS45077.2020.9050092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Broadband, high power, fast switching RF control and reconfigurable circuits frequently use PIN diodes as the controlling element. An assumption often made by circuit designers is that the PIN diode resistance is constant over frequency (not considering parasitics). PIN diode impedance is influenced by the junctions and the I-region carrier lifetime (τ) at frequencies as high as several hundred MHz, and so a means to define the onset of the high frequency resistance will provide these designers a guideline for that constant-resistance assumption. This paper provides such a guideline and shows how measurements of PIN diode impedance as a function of frequency can provide this metric, which analysis shows to be approximately 10/πτ. The procedure is validated with measurements on packaged PIN diodes.\",\"PeriodicalId\":184822,\"journal\":{\"name\":\"2020 IEEE Radio and Wireless Symposium (RWS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Radio and Wireless Symposium (RWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS45077.2020.9050092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS45077.2020.9050092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determining the Constant PIN Diode Impedance Point for Broadband Reconfigurability
Broadband, high power, fast switching RF control and reconfigurable circuits frequently use PIN diodes as the controlling element. An assumption often made by circuit designers is that the PIN diode resistance is constant over frequency (not considering parasitics). PIN diode impedance is influenced by the junctions and the I-region carrier lifetime (τ) at frequencies as high as several hundred MHz, and so a means to define the onset of the high frequency resistance will provide these designers a guideline for that constant-resistance assumption. This paper provides such a guideline and shows how measurements of PIN diode impedance as a function of frequency can provide this metric, which analysis shows to be approximately 10/πτ. The procedure is validated with measurements on packaged PIN diodes.