分子束外延生长的GaInP顶层电池和GaAs隧道二极管的串联应用

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI:10.1109/PVSC.1996.563956

J. Lammasniemi, K. Tappura, R. Jaakkola, A. Kazantsev, K. Rakennus, P. Uusimaa, M. Pessa

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引用次数: 5

摘要

采用气源分子束外延技术制备了Ga/sub 0.51/In/sub 0.49/P太阳能电池和GaAs隧道二极管。研究了Al/sub 0.51/In/sub 0.49/P、Al/sub 0.8/Ga/sub 0.2/ as和ZnSe等不同窗层材料对n-on-p Ga/sub 0.51/In/sub 0.49/P电池的影响。在Al/sub 0.51/In/sub 0.49/P窗口和发射极和基材层中梯度掺杂时，载流子收集效果最好。在2/ sp1次/ 2cm /sup 2/面积下，该电池的AM0效率为14.0%。在p型材料中掺杂be，在n型材料中掺杂si，制备了GaAs隧道二极管。最佳的GaAs隧道二极管比电阻为0.09 m/spl ω /cm/sup 2/，峰值隧穿电流为200 A/cm/sup 2/。此外，在n++Ga/sub 0.51/In/sub 0.49/P/ P ++GaAs二极管中观察到隧穿效应。

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Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications

Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.

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Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

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