二硫化碳钨掺杂与原始纳米管光电性能比较

Maxim I. Paukov, A. Goldt, G. Komandin, A. Syuy, Dmitry I. Yakubovskiy, S. Novikov, R. Tenne, A. Zak, A. Nasibulin, A. V. Arsenin, V. Volkov, M. Burdanova
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引用次数: 0

摘要

一维纳米材料的光电性能在电子器件中起着重要的作用。本文采用吸收光谱、拉曼光谱和太赫兹时域光谱(THz- tds)对原始碳纳米管(CNTs)和掺杂碳纳米管(ws2nt)进行了研究。我们证明,与二维材料相比,一维材料具有与曲率和位置相关的相似特性。此外,我们还展示了掺杂对这些性质的影响。我们的研究结果为这种材料作为光电子设备(包括未来的无线通信设备)的潜在材料的应用铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of Optoelectronic Properties of Doped and Pristine Nanotubes Based on Carbon and Tungsten Disulfide
: The optoelectronic properties of one-dimensional nanomaterials play an important role in electronic devices. In the present work, pristine and doped Carbon Nanotubes (CNTs) and WS 2 Nanotubes (WS 2 NT) are investigated by using absorption, Raman, and THz time-domain spectroscopy (THz-TDS). We demonstrate that the one-dimensional materials share similar properties asso-ciated with curvature and location in comparison with two-dimensional materials. In addition, we show how doping influence to these properties. Our results pave the way toward the application of such materials as a prospective material for optoelectronic devices including future wireless com-munication devices.
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