柔性微晶硅源门控晶体管在2.5 mm弯曲半径下具有可忽略的直流性能退化

2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS) Pub Date : 2022-07-10 DOI:10.1109/fleps53764.2022.9781587

E. Bestelink, Jean-Charles Fustec, O. Sagazan, Hao-Jing Teng, R. Sporea

{"title":"柔性微晶硅源门控晶体管在2.5 mm弯曲半径下具有可忽略的直流性能退化","authors":"E. Bestelink, Jean-Charles Fustec, O. Sagazan, Hao-Jing Teng, R. Sporea","doi":"10.1109/fleps53764.2022.9781587","DOIUrl":null,"url":null,"abstract":"The first flexible source-gated transistors (SGTs) in microcrystalline silicon have been fabricated and characterized under bending stress. As SGTs are contact controlled devices, the channel does not modulate drain current, however its geometry has implications for operation. We show how reduced channel length in SGTs helps promote negligible threshold voltage shifts when strain is introduced with a radius of r = 2.5 mm.","PeriodicalId":221424,"journal":{"name":"2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius\",\"authors\":\"E. Bestelink, Jean-Charles Fustec, O. Sagazan, Hao-Jing Teng, R. Sporea\",\"doi\":\"10.1109/fleps53764.2022.9781587\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The first flexible source-gated transistors (SGTs) in microcrystalline silicon have been fabricated and characterized under bending stress. As SGTs are contact controlled devices, the channel does not modulate drain current, however its geometry has implications for operation. We show how reduced channel length in SGTs helps promote negligible threshold voltage shifts when strain is introduced with a radius of r = 2.5 mm.\",\"PeriodicalId\":221424,\"journal\":{\"name\":\"2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/fleps53764.2022.9781587\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/fleps53764.2022.9781587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

制备了第一个柔性源门控微晶硅晶体管(sgt)，并在弯曲应力下进行了表征。由于sgt是接触控制器件，通道不调制漏极电流，但其几何形状对操作有影响。我们展示了当应变半径为r = 2.5 mm时，sgt中通道长度的减少如何有助于促进可忽略不计的阈值电压位移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius

The first flexible source-gated transistors (SGTs) in microcrystalline silicon have been fabricated and characterized under bending stress. As SGTs are contact controlled devices, the channel does not modulate drain current, however its geometry has implications for operation. We show how reduced channel length in SGTs helps promote negligible threshold voltage shifts when strain is introduced with a radius of r = 2.5 mm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)

自引率

0.00%

发文量