45纳米3D集成电路早期设计阶段的功耗、性能和面积预测

F. Toufexis, A. Papanikolaou, D. Soudris, G. Stamoulis, S. Bantas
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引用次数: 1

摘要

在这项工作中,研究了跨片温度和电源电压变化对3D集成电路性能预测的影响。为了实现这一目标,提出了一种新的设计流程来进行3D集成电路的设计探索。电源电压和热变化建模,以允许准确的PPA(功率,性能和面积)预测。使用该设计流程的主要部分,在一个由数亿门组成的系统中,显示了复杂的机制来确定系统的性能。随着芯片数量的增加,时序显示出4个不同的区域,其中温度或电压降是主要的限制因素。功耗不会随着芯片数量的增加而单调扩展。因此,最佳的系统性能是无法通过最小化温度和电压降来实现的,正如目前文献中所假设的那样。最后显示,与标称条件的假设相比,跨芯片温度和电源电压的变化导致时序平均增加40%,功耗降低53%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power, performance and area prediction of 3D ICs during early stage design exploration in 45nm
In this work, the impact of across-chip temperature and power supply voltage variations, on performance predictions in 3D ICs, is investigated. To make this possible, a novel design flow is proposed to perform design exploration of 3D ICs. Power supply voltage and thermal variations are modeled, to allow accurate PPA (power, performance and area) predictions. Using the main parts of this design flow, in a system comprising hundreds of million gates, complicated mechanisms are shown to determine the performance of the system. With increasing number of dies, timing is shown to exhibit 4 distinct regions, where either temperature or voltage drop is the dominant limiting factor. Power consumption does not scale monotonically with increasing die number. As a consequence, optimum system performance is in no way achieved by minimizing temperature and voltage drop, as is assumed in the literature so far. The across-chip temperature and power supply voltage variations are finally shown to cause on average 40% increase in timing and 53% decrease in power consumption, compared to the assumption of nominal conditions.
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