半导体SWCNTs中较高光学跃迁的许多体校正

G. R. A. Jamal, S. M. Mominuzzaman
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摘要

本文讨论了库仑效应对半导体单壁碳纳米管光学跃迁能的影响。由于其准一维结构,电子-电子和电子-空穴相互作用以及相应的自能和激子结合能在SWCNTs中非常重要,这两种能量之间的差异产生了许多体效应。本文首先简要回顾了SWCNTs传统单粒子电子图像的校正性质,包括前四种光学跃迁中的多体效应。然后,研究了接下来三个更高的光学跃迁(即半导体SWCNTs的第5、第6和第7跃迁)所需的许多体校正。这些高跃迁的实验值收集自最近的实验报告,以便通过扩展单粒子图像来解释这些数据,这些图像校正了纳米管曲率和手性效应以及许多体校正。我们的研究结果表明,这三种跃迁都很好地遵循了所提出的校正图,平均绝对误差小于0.5%,这证明了半导体SWCNTs的第5、6和7光学跃迁的激子行为比最近一些研究报道的第3和4光学跃迁更强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Many body corrections for higher optical transitions in semiconducting SWCNTs
In this work, Coulomb effect on determining optical transition energies of semiconducting single wall carbon nanotubes is discussed. Due to their quasi-one-dimensional structure, electron-electron and electron-hole interaction and corresponding self energy and exciton binding energy are important in SWCNTs and the difference between these two energies gives many body effect. Here, at first, a brief review of nature of correction in the conventional single particle electronic picture of SWCNTs to include many body effect in first four optical transitions is presented. Then, many body corrections needed for next three higher optical transitions i.e. 5th, 6th and 7th transitions of semiconducting SWCNTs are investigated. Experimental values of these higher transitions are collected from recent experimental reports so as to explain those data by extending single-particle picture corrected for nanotube curvature and chirality effect along with many body corrections. Our result shows that these three transitions excellently follow the proposed corrected picture with less than 0.5% average absolute error which proves that excitonic behaviour is strong in 5th, 6th and 7th optical transitions of semiconducting SWCNTs unlike 3rd and 4th transitions as reported in some recent works.
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