相变存储器件中原子迁移现象的建模

2015 IEEE International Memory Workshop (IMW) Pub Date : 2015-05-17 DOI:10.1109/IMW.2015.7150296

L. Crespi, A. Lacaita, M. Boniardi, E. Varesi, A. Ghetti, A. Redaelli, G. D'Arrigo

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引用次数: 9

摘要

本文对具有壁式结构的相变存储器件的原子迁移进行了实验研究，并建立了包括电、热、机械驱动力在内的定量模型。对用正反极性编程脉冲驱动装置所得到的实验结果进行了说明。并与重循环细胞的原子迁移数据进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of Atomic Migration Phenomena in Phase Change Memory Devices

Atomic migration on Phase Change Memory devices with wall architecture has been experimentally investigated and a quantitative model including electrical, thermal, and mechanical driving forces has been developed. The experimental results collected by driving the device with programming pulses with direct and reverse polarity have been accounted for. Comparison with data of atomic migration on heavily cycled cells is also provided.

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来源期刊

2015 IEEE International Memory Workshop (IMW)

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