{"title":"离子注入InSb光电探测器","authors":"H. Betz, K. Wiedeburg, H. Ryssel, H. Kranz","doi":"10.1109/IEDM.1977.189317","DOIUrl":null,"url":null,"abstract":"Planar n<sup>+</sup>p- and p<sup>+</sup>n-photodetectors have been made in InSb by implantation of sulfur and beryllium, n<sup>+</sup>p-detectors show a flat response from 4.5 to 5.3 µm, resulting from the Burstein-Moss effect, whereas the p<sup>+</sup>n-detectors show the usual behavior of the response with a shift in the cutoff-wavelength from 4.8 to 5.5 µm depending on the substrate doping. The obtained peak detectivities are 3 × 10<sup>11</sup>cmHz<sup>1/2</sup>W<sup>-1</sup>for sulfur implanted and 10<sup>12</sup>cmHz<sup>1/2</sup>W<sup>-1</sup>for beryllium implanted diodes at a field of view of 0°. The corresponding externalquantum efficiencies are 40 to 60% for all detectors.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ion implanted InSb photodetectors\",\"authors\":\"H. Betz, K. Wiedeburg, H. Ryssel, H. Kranz\",\"doi\":\"10.1109/IEDM.1977.189317\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Planar n<sup>+</sup>p- and p<sup>+</sup>n-photodetectors have been made in InSb by implantation of sulfur and beryllium, n<sup>+</sup>p-detectors show a flat response from 4.5 to 5.3 µm, resulting from the Burstein-Moss effect, whereas the p<sup>+</sup>n-detectors show the usual behavior of the response with a shift in the cutoff-wavelength from 4.8 to 5.5 µm depending on the substrate doping. The obtained peak detectivities are 3 × 10<sup>11</sup>cmHz<sup>1/2</sup>W<sup>-1</sup>for sulfur implanted and 10<sup>12</sup>cmHz<sup>1/2</sup>W<sup>-1</sup>for beryllium implanted diodes at a field of view of 0°. The corresponding externalquantum efficiencies are 40 to 60% for all detectors.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189317\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189317","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Planar n+p- and p+n-photodetectors have been made in InSb by implantation of sulfur and beryllium, n+p-detectors show a flat response from 4.5 to 5.3 µm, resulting from the Burstein-Moss effect, whereas the p+n-detectors show the usual behavior of the response with a shift in the cutoff-wavelength from 4.8 to 5.5 µm depending on the substrate doping. The obtained peak detectivities are 3 × 1011cmHz1/2W-1for sulfur implanted and 1012cmHz1/2W-1for beryllium implanted diodes at a field of view of 0°. The corresponding externalquantum efficiencies are 40 to 60% for all detectors.
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