{"title":"双平衡3-18 GHz电阻HEMT单片混频器","authors":"T. Chen, K. Chang, S. Bui, L.C.T. Liu, S. Pak","doi":"10.1109/MWSYM.1992.188012","DOIUrl":null,"url":null,"abstract":"A double balanced (DB) 3-18 GHz resistance HEMT (high electron mobility transistor) monolithic mixer has been successfully developed. This mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO (local oscillator) balun, and two passive baluns, RF and IF (intermediate frequency). At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-14 GHz RF and 7.5-11 dB for 3-18 GHz RF. The simulated conversion loss is very much in agreement with the measured results. Also, a third-order input intercept of +26 dBm is achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. The design is believed to be the first DB resistive HEMT MMIC (monolithic microwave integrated circuit) mixer covering up to 6:1 bandwidth.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A double balanced 3-18 GHz resistive HEMT monolithic mixer\",\"authors\":\"T. Chen, K. Chang, S. Bui, L.C.T. Liu, S. Pak\",\"doi\":\"10.1109/MWSYM.1992.188012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A double balanced (DB) 3-18 GHz resistance HEMT (high electron mobility transistor) monolithic mixer has been successfully developed. This mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO (local oscillator) balun, and two passive baluns, RF and IF (intermediate frequency). At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-14 GHz RF and 7.5-11 dB for 3-18 GHz RF. The simulated conversion loss is very much in agreement with the measured results. Also, a third-order input intercept of +26 dBm is achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. The design is believed to be the first DB resistive HEMT MMIC (monolithic microwave integrated circuit) mixer covering up to 6:1 bandwidth.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.188012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A double balanced 3-18 GHz resistive HEMT monolithic mixer
A double balanced (DB) 3-18 GHz resistance HEMT (high electron mobility transistor) monolithic mixer has been successfully developed. This mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO (local oscillator) balun, and two passive baluns, RF and IF (intermediate frequency). At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-14 GHz RF and 7.5-11 dB for 3-18 GHz RF. The simulated conversion loss is very much in agreement with the measured results. Also, a third-order input intercept of +26 dBm is achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. The design is believed to be the first DB resistive HEMT MMIC (monolithic microwave integrated circuit) mixer covering up to 6:1 bandwidth.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
