{"title":"基于电荷补偿调节器的3D NAND闪存节能升压系统","authors":"H. Jeong, Seonghwan Cho","doi":"10.23919/VLSICircuits52068.2021.9492355","DOIUrl":null,"url":null,"abstract":"This paper presents an energy-efficient wordline driver for a triple level cell 3D NAND flash. Unlike conventional circuit that has a large charge pump and high-voltage regulators operating under the inefficient stepped-up voltage, the proposed circuit has a distributed charge pump (CP) that directly drive the wordlines, aided by a charge compensating regulator that operate under the nominal supply and produces a ripple free output. The proposed voltage driver for a 39 wordline layer is fabricated in 180nm UHV process and it consumes 99.8nJ from a 2.2V during 1 unit of program pulse and verify period, which is more than 2.1x improvement in energy efficiency compared to the conventional scheme.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"222 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An Energy-Efficient Voltage Step-up System for 3D NAND Flash using Charge-Compensating Regulator\",\"authors\":\"H. Jeong, Seonghwan Cho\",\"doi\":\"10.23919/VLSICircuits52068.2021.9492355\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an energy-efficient wordline driver for a triple level cell 3D NAND flash. Unlike conventional circuit that has a large charge pump and high-voltage regulators operating under the inefficient stepped-up voltage, the proposed circuit has a distributed charge pump (CP) that directly drive the wordlines, aided by a charge compensating regulator that operate under the nominal supply and produces a ripple free output. The proposed voltage driver for a 39 wordline layer is fabricated in 180nm UHV process and it consumes 99.8nJ from a 2.2V during 1 unit of program pulse and verify period, which is more than 2.1x improvement in energy efficiency compared to the conventional scheme.\",\"PeriodicalId\":106356,\"journal\":{\"name\":\"2021 Symposium on VLSI Circuits\",\"volume\":\"222 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSICircuits52068.2021.9492355\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSICircuits52068.2021.9492355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Energy-Efficient Voltage Step-up System for 3D NAND Flash using Charge-Compensating Regulator
This paper presents an energy-efficient wordline driver for a triple level cell 3D NAND flash. Unlike conventional circuit that has a large charge pump and high-voltage regulators operating under the inefficient stepped-up voltage, the proposed circuit has a distributed charge pump (CP) that directly drive the wordlines, aided by a charge compensating regulator that operate under the nominal supply and produces a ripple free output. The proposed voltage driver for a 39 wordline layer is fabricated in 180nm UHV process and it consumes 99.8nJ from a 2.2V during 1 unit of program pulse and verify period, which is more than 2.1x improvement in energy efficiency compared to the conventional scheme.