H. Mine, Y. Matsumoto, R. Yamada, K. Mino, H. Kimura, Y. Kondo, Y. Ikeda
{"title":"应用SiC功率器件的电力电子设备的特性","authors":"H. Mine, Y. Matsumoto, R. Yamada, K. Mino, H. Kimura, Y. Kondo, Y. Ikeda","doi":"10.1109/icpere.2012.6287252","DOIUrl":null,"url":null,"abstract":"Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one.","PeriodicalId":303729,"journal":{"name":"2012 International Conference on Power Engineering and Renewable Energy (ICPERE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Characteristics of the power electronics equipments applying the SiC power devices\",\"authors\":\"H. Mine, Y. Matsumoto, R. Yamada, K. Mino, H. Kimura, Y. Kondo, Y. Ikeda\",\"doi\":\"10.1109/icpere.2012.6287252\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one.\",\"PeriodicalId\":303729,\"journal\":{\"name\":\"2012 International Conference on Power Engineering and Renewable Energy (ICPERE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Power Engineering and Renewable Energy (ICPERE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icpere.2012.6287252\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Power Engineering and Renewable Energy (ICPERE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icpere.2012.6287252","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characteristics of the power electronics equipments applying the SiC power devices
Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one.