应用SiC功率器件的电力电子设备的特性

H. Mine, Y. Matsumoto, R. Yamada, K. Mino, H. Kimura, Y. Kondo, Y. Ikeda
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引用次数: 5

摘要

应用碳化硅(SiC)功率半导体优越特性的电力电子设备一直是人们研究和开发的对象。将使用Si-IGBT和SiC-SBD(肖特基势垒二极管)的混合模块应用于电机驱动逆变器,可以将逆变器部分的损耗降低25%。此外,将SiC-MOSFET和SiC-SBD组成的全sic模块应用于太阳能逆变器,使主电路单元效率提高99%,设备体积比传统逆变器小25%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characteristics of the power electronics equipments applying the SiC power devices
Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one.
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