用于片上光互连的高速硅基光调制器

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345712

D. Marris, A. Lupu, D. Pascal, J. Cercus, L. Vivien, E. Cassan, S. Laval

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引用次数: 0

摘要

描述了一种嵌入反向偏置PIN结中的调制掺杂SiGe-Si多量子阱调制器(MD-MQW)。实验和理论结果表明，与载流子耗尽相关的等离子体色散效应可以实现光学折射率的变化。提出了适合将获得的相位调制转换为幅度调制的干涉集成结构，并评估了光调制器的主要性能，包括固有速度、对比度和插入损耗。

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High speed Si-based optical modulator for on-chip optical interconnects

A modulation-doped SiGe-Si multiple quantum well modulator (MD-MQW) embedded in a reverse biased PIN junction is described. Experimental and theoretical results show that the optical index variation can be achieved by plasma-dispersion effect associated to carrier depletion. Interferometric integrated structures proper to transform the obtained phase modulation into amplitude modulation are presented, and the main properties of the optical modulator are evaluated, including intrinsic rapidity, contrast ratio and insertion losses.

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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