用于嵌入式应用的FinFET SONOS闪存

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269355

Peiqi Xuan, Min She, B. Harteneck, A. Liddle, J. Bokor, T. King

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引用次数: 78

摘要

首次研究了FD-SOI(完全耗尽绝缘体上硅)FinFET SONOS闪存器件，发现它们可扩展到40 nm的栅极长度。虽然FinFET SONOS器件没有身体接触，但实现了出色的程序/擦除特性，同时具有高耐用性，长保持时间和低读取干扰。比较了在[100]和[110]硅表面上制造的器件。

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FinFET SONOS flash memory for embedded applications

FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared.

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IEEE International Electron Devices Meeting 2003

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