热稳定AlGaAs/GaAs微波功率HBTs的设计与制造

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303072

B. Bayraktaroglu, R. Fitch, J. Barrette, R. Scherer, L. Kehias, C.I. Huang

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引用次数: 14

摘要

采用新颖的设计和制造技术，实现了AlGaAs/GaAs微波功率异质结双极晶体管(HBTs)创纪录的功率密度性能。在10 GHz、0.6 W连续波输出功率、7.1 dB增益和60% PAE条件下，HBTs达到其电子极限(10 mWspl mu/m/sup 2/输出功率密度)的热稳定运行。HBT的设计基于对电热器件的详细分析，揭示了在多发射极功率器件中提供有效的热源之间传热路径的必要性。使用热分流和热透镜技术将多余的热量传递出设备。与传统器件相比，该器件的热阻降低了2.5-3倍

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Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTs

Record power density performance of AlGaAs/GaAs microwave power heterojunction bipolar transistors (HBTs) was accomplished through the use of novel design and fabrication techniques. Thermally-stable operation of HBTs up to their electronic limitation (10 mWspl mu/m/sup 2/ output power density at 10 GHz with 0.6 W CW output power, 7.1 dB gain and 60% PAE) was attained. The design of the HBT was based on a detailed electro-thermal device analysis which revealed the necessity to provide an effective heat transfer path between heat sources in a multi-emitter power device. Excess heat was transferred out of the device using thermal shunt and thermal lens techniques. The thermal resistance of the device was lowered by a factor of 2.5-3 compared to conventional devices.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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